Veeco Introduces GENxplor Molecular Beam Epitaxy System

Aug. 19, 2013 - Veeco Instruments Inc. today introduced the GENxplor Molecular Beam Epitaxy (MBE) Deposition System for the compound semiconductor R&D market. The GENxplor creates high quality epitaxial layers on substrates up to 3" in diameter and is ideal for cutting edge research on a wide variety of materials including GaAs, nitrides, and oxides.

"The compound semiconductor R&D community asked for a more affordable, flexible, and easy-to-use MBE system and Veeco has delivered with the GENxplor," commented Jim Northup, Veeco's Vice President and General Manager. "We have repackaged Veeco's industry-leading MBE technology into a novel 'all-in-one' design that combines the reactor and electronics on a single frame. It will change the way researchers use MBE."

The GENxplor uses Veeco's proven GEN10 growth chamber design and features unmatched process flexibility, ideal for materials research on technologies such as UV LEDs, solar cells, and superconductors.